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1 article(s) from Weinberger, Robert

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

Markus Tautz,
Maren T. Kuchenbrod,
Joachim Hertkorn,
Robert Weinberger,
Martin Welzel,
Arno Pfitzner and
David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

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Figure 1: Epitaxial stack designs A–E grown by MOCVD. Different sequences of 2D and 3D GaN were prepared. The...

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Figure 2: Reproducibility analysis of the ICP-OES method for determining etch depth z (GaN). Four GaN samples...

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Figure 3: PL images of A (a), D (b) and E (c) used for determination of dislocation density.

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Figure 4: Average GaN removal z (GaN) of A and B during etching in 30 wt % KOH at 70 °C (a) and 80 °C (b) det...

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Figure 5: SEM images of A after 60 min etching in 30 wt % KOH solution at RT (a), and of B after 2 min etchin...

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Figure 6: ICP-OES determined average GaN removal z (GaN) of B and C during etching in 30 wt % KOH at 80 °C (a...

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Figure 7: ICP-OES determined average GaN removal z (GaN) of A and D (a) and A and E (b) during etching in 30 ...

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Figure 8: SEM image of the second 2D–3D transition plateau on pyramid top of E after etching in 30 wt % KOH s...

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Published 03 Jan 2020

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